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| Inchange Semiconductor Product Specification Silicon PNP Power Transistors BD440 BD442 DESCRIPTION With TO-126 package Complement to type BD439,BD441 APPLICATIONS For medium power linear and switching applications PINNING PIN 1 2 3 DESCRIPTION Emitter Collector;connected to mounting base Base Absolute maximum ratings (Ta=25ae ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO VEBO IC ICM IB PC Tj Tstg HAN INC Collector-emitter voltage Emitter -base voltage Collector current (DC) Collector current-Peak Base current Collector power dissipation Junction temperature Storage temperature SEM GE Open emitter BD442 BD440 Open base BD442 BD440 OND IC CONDITIONS TOR UC VALUE UNIT -60 -80 -60 V V -80 Open collector -5 -4 -7 -1 V A A A W ae ae TC=25ae 36 150 -65~150 Inchange Semiconductor Product Specification Silicon PNP Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER Collector-emitter saturation voltage Base-emitter on voltage Base-emitter on voltage BD440 IC=-0.1A; IB=0 BD442 BD440 ICBO Collector cut-off current BD442 BD440 ICES Collector cut-off current BD442 IEBO Emitter cut-off current VCB=-80V; IE=0 VCE=-60V; VBE=0 VCB=-60V; IE=0 CONDITIONS IC=-2A; IB=-0.2A IC=-10mA ; VCE=-5V IC=-2A ; VCE=-1V BD440 BD442 SYMBOL VCEsat VBE-1 VBE-2 MIN TYP. MAX UNIT V V -0.8 -0.58 -1.5 -60 V VCEO(SUS) Collector-emitter sustaining voltage V -80 -100 |I A -100 |I VCE=-80V; VBE=0 VEB=-5V; IC=0 A hFE-1 IN DC current gain BD440 BD442 hFE-2 DC current gain hFE-3 DC current gain ANG CH BD440 EMIC ES IC=-0.5A ; VCE=-1V IC=-2A ; VCE=-1V IC=-250mA; VCE=-1V IC=-10mA ; VCE=-5V OND 20 15 TOR UC -1 130 140 mA 40 25 15 3 MHz BD442 fT Transition frequency 2 Inchange Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE BD440 BD442 SEM GE HAN INC OND IC TOR UC Fig.2 Outline dimensions 3 |
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